2014年12月23日（周二）下午3点，量子物质科学协同创新中心清华分中心seminar：

报告题目： Atomic-Scale Electronic Structures across Heterointerfaces by Cross-sectional STM 报告人： Ya-Ping Chiu Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan 报告时间： 2014-12-23 15:00 报告地点：清华物理系理科楼三楼报告厅摘要： Interfaces have gotten a lot of attention recently and provide a powerful route to create and manipulate the charge, spin, orbital, and lattice degrees of freedom. Motivated by the importance of the critical nanoscale interfacial science that governs the applications of devices, the objective of our studies is emphasized the interfacial characteristics of hetero-epitaxial structures, and elucidated the fundamental mechanisms that pertain in these systems.
In our studies, cross-sectional scanning tunneling microscopy (XSTM) is employed to observe directly the epitaxial interfacial structures and the local electronic properties with atomic-level insight. Our scanning tunneling microscopy and spectroscopy studies with atomic precision provide direct experimental insight into the origin and the natural evolution of the electronic properties across the heterointerfaces. In this talk, topics to be discussed include high-κ’s/III-V’s semiconductors, polymer heterojunctions, and complex oxide heterostructures, which provide a lot of insights to these communities by using this technique.[1-4]
Selected references:
1. Hazut, Ori; Huang, Bo-Chao; Pantzer, Adi; Amit, Iddo; Rosenwaks, Yossi; Kohn, Amit; Chang, Chia-Seng; Chiu, Ya-Ping*; Yerushalmi, Roie* “Parallel p-n Junctions across Nanowires by One-Step ex-situ Doping”, ACS Nano (accepted).
2. Min-Chuan Shih, Bo-Chao Huang, Chih-Cheng Lin, Shao-Sian Li, Hsin-An Chen, Ya-Ping Chiu*, Chun-Wei Chen*, “Atomic-Scale Interfacial Band Mapping across Vertically Phased-Separated Polymer/Fullerene Hybrid Solar Cells”, Nano Letters, 13, 2387 (2013).
3. Bo-Chao Huang, Ya-Ping Chiu*, Po-Cheng Huang, Wen-Ching Wang, Vu Thanh Tra, Jan-Chi Yang, Qing He, Jiunn-Yuan Lin, Chia-Seng Chang, Ying-Hao Chu, “Mapping Band Alignment across Complex Oxide Heterointerfaces”, Phys. Rev. Lett., 109, 246807 (2012).
4. Y. P. Chiu*, B. C. Huang , M. C. Shih, J. Y. Shen, P. Chang, C. S. Chang, M. L. Huang, M. -H. Tsai, M. Hong*, and J. Kwo*, “Atomic-scale Determination of Band Offsets at the Gd2O3/GaAs (100) Hetero-interface Using Scanning Tunneling Spectroscopy”, Appl. Phys. Lett. 99, 212101 (2011).